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SiC diodes
▼S20SC65WV
Contribute to greater reduction of power consumption and lower noise
Contribute to greater reduction of power consumption and lower noise
SiC schottky barrier diodes
S20SC65WV
■SiC schottky barrier diodes
■20% VF improvement compared to conventional FRD
■77% improvement in recovery characteristics compared to conventional FRD
■20% VF improvement compared to conventional FRD
■77% improvement in recovery characteristics compared to conventional FRD
Reduction of power consumption
20% VF improvement compared to conventional FRD.
Achieves lower noise
77% improvement in recovery characteristics compared to conventional FRD.
Equivalent Circuit
Product Specifications
| Part Name | Tstg [°C] | Tj [°C] | VRRM [V] | IF typ. [A] | VF typ. [V] | IR max. [uA] | Package (JEDEC CODE) |
Package (HOUSE NAME) |
|---|---|---|---|---|---|---|---|---|
| S20SC65WV | -55~175 | 175 | 650 | 20 | 1.60 (Per leg) |
100 (Per leg) |
TO-247AD | MTO-3PV |
| 1.2kV SiC-SBD Under planning |
-55~175 | 175 | 1,200 | 20 | 1.50 (Per leg) |
200 (Per leg) |
TO-247AD | MTO-3PV |
